1 d a t a s h e e t : c 4 d 1 0 1 2 0 d r e v . - a C4D10120D Csilicon carbide schottky diode z -r ec ? r ectifier v rrm = 1200 v i f; t c <135?c = 18 a q c =69 nc features ? 1.2kv schottky rectifer ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching ? extremely fast swtitching benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? power factor correction ? motor drives package to-247-3 maximum ratings (t c =25c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 1200 v v rsm surge peak reverse voltage 1300 v v r dc peak reverse voltage 1200 v i f continuous dc current(per leg/device) 9/18 a t c <135?c, no ac component i frm repetitive peak forward surge current 26* 18* a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i fsm non-repetitive forward surge current 46* 36* a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse p tot power dissipation(per leg/device) 93/187 40/81 w t c =25?c t c =110?c t c maximum case temperature 135 ?c t j operating junction range -55 to +175 ?c t stg storage temperature range -55 to +135 ?c to-247 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw * per leg, ** per device part number package marking C4D10120D to-247-3 c4d10120 subject to change without notice. www.cree.com/power
2 C4D10120D rev. a electrical characteristics (per leg) symbol parameter typ. max. unit test conditions note v f forward voltage 1.4 1.9 1.8 3 v i f = 5 a t j =25c i f = 5 a t j =175c i r reverse current 20 40 150 300 a v r = 1200 v t j =25c v r = 1200 v t j =175c q c total capacitive charge 34.5 nc v r = 1200 v, i f = 5a d i /d t = 200 a/s t j = 25c c total capacitance 390 27 20 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note:this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 1.6* 0.8** c/w * per leg, ** per device typical performance (per leg) 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 current (a) voltage (v) figure 1. forward characteristics figure 2. reverse characteristics 0 100 200 300 400 500 600 700 800 900 1000 0 500 1000 1500 2000 current (a) voltage (v) t j =-55c t j = 25c t j = 75c t j =125c t j =175c t j =-55c t j = 25c t j = 75c t j =125c t j =175c i f (a) v f (v) i r (a) v r (v)
3 C4D10120D rev. a 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175 figure 3. current derating figure 4. power derating 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 25 50 75 100 125 150 175 figure 5. recovery charge vs. reverse voltage figure 6. capacitance vs. reverse voltage typical performance (per leg) 0 50 100 150 200 250 300 350 400 450 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 t c ?c i f(peak) (a) p tot (w) t c ?c 10% duty 30% duty 50% duty 70% duty dc qrr (nc) v r (v) c (pf) v r (v)
4 C4D10120D rev. a figure 7. transient thermal impedance 0.001 0.01 0.1 1 10 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 10 diode model thermal resistance (?c/w) t (sec) typical performance (per leg) t t t r if v vf * + = note: t j is diode junction temperature in degrees celsius r t = 0.08 + ( t j * 8.5*10 -4 ) v t = 0.96 + ( t j * - 1.22*10 -3 )
5 5 C4D10120D rev. a this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2012 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power part number package marking C4D10120D to-247-3 c4d10120 recommended solder pad layout package dimensions package to-247-3 pos inches millimeters min max min max a .605 .635 15.367 16.130 b .800 .831 20.320 21.10 c .780 .800 19.810 20.320 d .095 .133 2.413 3.380 e .046 .052 1.168 1.321 f .060 .095 1.524 2.410 g .215 typ 5.460 typ h .175 .205 4.450 5.210 j .075 .085 1.910 2.160 k 6? 21? 6? 21? l 4? 6? 4? 6? m 2? 4? 2? 4? n 2? 4? 2? 4? p .090 .100 2.286 2.540 q .020 .030 .508 .762 r 9? 11? 9? 11? s 9? 11? 9? 11? t 2? 8? 2? 8? u 2? 8? 2? 8? v .137 .144 3.487 3.658 w .210 .248 5.334 6.300 x .502 .557 12.751 14.150 y .637 .695 16.180 17.653 z .038 .052 0.964 1.321 aa .110 .140 2.794 3.556 bb .030 .046 0.766 1.168 cc .161 .176 4.100 4.472 w x y z aa bb cc to-247-3 the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (rohs), as amended through april 21, 2006.
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